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2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3830 600 500 10 6(Pulse12) 2 50(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1.3max 8typ 45typ
(Ta=25C) 2SC3830 Unit mA
External Dimensions MT-25(TO220)
3.00.2 10.20.2 4.80.2 2.00.1
A
16.00.7
V V MHz pF
8.80.2
a b
o3.750.2
12.0min
4.0max
V
1.35
0.65 +0.2 -0.1 2.5 BCE 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.2 IB2 (A) -0.4 ton (s) 1max tstg (s) 4.5max tf (s) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
6
1A
80 0m A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (sa t)( V ) (IC/I B= 5) 2
I C - V BE Temperature Characteristics (Typical)
6 (VCE=4V)
5 Collector Current I C (A)
60 0m A
5 Collector Current I C (A)
4
400 mA
4
300mA
3
V B E( sat) 1
p) -55C (Case Tem Temp)
ase Tem p)
3
mp
200mA
2
I B= 100mA
emp se T
2
(Ca
(Ca 25C
12
VCE(sat) 0 0.02 0.05 0.1 0.5 1
-5
5
C
0
0
1
2
3
4
5
0
0
0.2
0.4
125
1
5
C
1
0.6
0.8
-55C
C
(Cas
125C (C
se
e Te
25C (Case
(C as 2 5 e Te m p) C
Te
mp)
)
)
1.0
1. 2
1.4
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 DC Cur rent Gain h F E
j - a( C/W)
hFE - IC Characteristics (Typical)
t on*t s t g *t f ( s)
7 5
t on* t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
4
125C
25C
V C C 200V I C: IB1:I B2= 10:1:-2 1 0.5
t s tg
Switching T im e
-55C
Transient Thermal Resistance
1
10
ton
0.5 0.3
tf 0.1 0.2 0.5 1 5 6
5 0.02
0.05
0.1
0.5
1
56
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10 5
10
Reverse Bias Safe Operating Area
20 50
P c - T a Derating
10
0
s
10 5 Collector Curren t I C( A) M aximum Power Dissipa ti on P C( W) 40
W ith
1m s
Collect or Curr ent I C( A)
ms
In
D C
fin
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than 1%
30
ite he at si nk
20
0.1 0.05 0.02 7
Without Heatsink Natural Cooling
0.1 0.05 0.02 50
10 Without Heatsink 0 25 50 75 100 125 150
10
50
100
500 600
100 Collector-Emitter Voltage V C E( V)
500 600
2 0
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
70
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